SiC-MOSFET Solid State High Frequency Pipe Welder

Njengoko itekhnoloji iphucukile, kutsha nje i-slid state high frequency welder ithatha isizukulwana sesithathu semiconductor imathiriyeli ebizwa ngokuba yiSiC-MOSFET.

IsiZukulwana sesiThathu iiMathiriyeli zeSemiconductor yeSiC-MOSFET kwiiMpawu zokuSebenza

1. Ubushushu obuphezulu kunye nokumelana noxinzelelo oluphezulu: I-SiC ine-gap yebhendi ebanzi malunga namaxesha angama-3 eSi, ngoko inokuqonda izixhobo zamandla ezinokusebenza ngokuzinzileyo naphantsi kweemeko eziphezulu zokushisa. Amandla ebala lokudityaniswa kwe-insulation ye-SiC ali-10 ngokuphindwe ka-Si, ngoko ke kunokwenzeka ukwenza izixhobo zamandla ombane ophezulu kunye nogxininiso lwe-doping oluphezulu kunye nomaleko obhityileyo wefilimu ekhukulisekayo xa kuthelekiswa nezixhobo ze-Si.

2. Isixhobo se-miniaturization kunye ne-lightweight: Izixhobo ze-silicon ze-carbide zine-conductivity ephezulu ye-thermal kunye noxinzelelo lwamandla, olunokwenza lula inkqubo yokutshatyalaliswa kobushushu, ukwenzela ukuba kufezekiswe i-miniaturization yesixhobo kunye ne-lightweight.

3. Ilahleko ephantsi kunye ne-frequency ephezulu: I-frequency yokusebenza yezixhobo ze-silicon carbide inokufikelela kumaxesha e-10 yezixhobo ezisekelwe kwi-silicon, kwaye ukusebenza kakuhle akunciphisi ngokunyuka kwe-frequency yokusebenza, enokunciphisa ukulahlekelwa kwamandla malunga ne-50%; Ngexesha elifanayo, ngenxa yokunyuka kwamaxesha amaninzi, umthamo wamacandelo e-peripheral afana ne-inductance kunye ne-transformers iyancitshiswa, kwaye umthamo kunye nezinye iindleko zeendleko emva kokubunjwa kwenkqubo ziyancipha.

I-SiC-MOSFET Solid State Solid State High Frequency Pipe Welder Advantages

I-1.60% ilahleko esezantsi kunezixhobo ze-Si-MOSFET,ukuphumelela kwe-welder inverter yonyuka ngaphezu kwe-10%,ubuchule bokuwelda bonyuka ngaphezu kwe-5%.

2.I-Single SiC-MOSFET yoxinaniso lwamandla likhulu, ubungakanani obuhlanganisiweyo buncitshiswa ngokufanelekileyo, nto leyo inciphisa ngokuthe ngqo amanqaku eempazamo kunye nemitha ye-electromagnetic yangaphandle, kwaye iphucula ukuthembeka kweyunithi yamandla e-inverter.

I-3.SiC-MOSFET imelana namandla ombane aphezulu kune-Si-MOSFET yoqobo, amandla ombane akwi-welder DC anyuswe ngokufanelekileyo phantsi kwesiseko sokuqinisekisa ukhuseleko (280VDC ye-parallel resonant welder kunye ne-500VDC kuthotho lwe-resonant welder). .

4.Ilahleko yesixhobo esitsha se-SiC-MOSFET yi-40% kuphela ye-Si-MOSFET, phantsi kweemeko ezithile zokupholisa, ukutshintshela i-frequency kunokuba phezulu, uthotho lwe-Si-MOSFET welder ithatha itekhnoloji yokuphinda kabini itekhnoloji, yamkele i-SiC-MOSFET inokuyila ngokuthe ngqo kwaye ivelise ukuya kuthi ga. I-600KHz i-welder yefrikhwensi ephezulu.

5.Ukonyuka kombane we-SiC-MOSFET welder DC, umbane okwicala legridi uphezulu, i-AC incinci yangoku, incinci yangoku, ixabiso lomxhasi lonikezelo lombane kunye nokuhanjiswa liyancipha kakhulu, kunye nokusebenza kombane kuphuculwe ngempumelelo.