SiC-MOSFET

Izinto zeSemiconductor yesiZukulwana sesithathu

Njengoko itekhnoloji iphucukile, kutsha nje i-solid state high frequency welder ithatha isizukulwana sesithathu semiconductor imathiriyeli ebizwa ngokuba yiSiC-MOSFET.

IsiZukulwana sesiThathu iiMathiriyeli zeSemiconductor yeSiC-MOSFET kwiiMpawu zokuSebenza

1. Ubushushu obuphezulu kunye nokumelana noxinzelelo oluphezulu: I-SiC ine-gap yebhendi ebanzi malunga namaxesha angama-3 eSi, ngoko inokuqonda izixhobo zamandla ezinokusebenza ngokuzinzileyo naphantsi kweemeko eziphezulu zokushisa. Amandla ebala lokudityaniswa kwe-insulation ye-SiC ali-10 ngokuphindwe ka-Si, ngoko ke kunokwenzeka ukwenza izixhobo zamandla ombane ophezulu kunye nogxininiso lwe-doping oluphezulu kunye nomaleko obhityileyo wefilimu ekhukulisekayo xa kuthelekiswa nezixhobo ze-Si.

2. Isixhobo se-miniaturization kunye ne-lightweight: Izixhobo ze-silicon ze-carbide zine-conductivity ephezulu ye-thermal kunye noxinzelelo lwamandla, olunokwenza lula inkqubo yokutshatyalaliswa kobushushu, ukwenzela ukuba kufezekiswe i-miniaturization yesixhobo kunye ne-lightweight.

3. Ilahleko ephantsi kunye ne-frequency ephezulu: I-frequency yokusebenza yezixhobo ze-silicon carbide inokufikelela kumaxesha e-10 yezixhobo ezisekelwe kwi-silicon, kwaye ukusebenza kakuhle akunciphisi ngokunyuka kwe-frequency yokusebenza, enokunciphisa ukulahlekelwa kwamandla malunga ne-50%; Ngexesha elifanayo, ngenxa yokunyuka kwamaxesha amaninzi, umthamo wamacandelo e-peripheral afana ne-inductance kunye ne-transformers iyancitshiswa, kwaye umthamo kunye nezinye iindleko zeendleko emva kokubunjwa kwenkqubo ziyancipha.

SiC-MOSFET